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IRFHS9301TR/TR2PbF
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
BV DSS
ΔΒ V DSS / Δ T J
R DS(on)
V GS(th)
Δ V GS(th)
I DSS
I GSS
gfs
Q g
Q g
Q gs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
-30
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
9.3
–––
–––
–––
–––
0.02
30
52
-1.8
-4.8
–––
–––
–––
–––
–––
6.9
13
2.1
–––
–––
37
65
-2.4
–––
-1.0
-150
-100
100
–––
–––
–––
–––
V
V/°C
m Ω
V
mV/°C
μ A
nA
S
nC
nC
V GS = 0V, I D = -250 μ A
Reference to 25°C, I D = -1mA
V GS = -10V, I D = -7.8A
V GS = -4.5V, I D = -6.2A
V DS = V GS , I D = -25 μ A
V DS = -24V, V GS = 0V
V DS = -24V, V GS = 0V, T J = 125°C
V GS = -20V
V GS = 20V
V DS = -10V, I D = -7.8A
V DS = -15V,V GS = -4.5V,I D = - 7.8A
V GS = -10V
V DS = -15V
Q gd
R G
t d(on)
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
–––
–––
–––
3.9
17
12
–––
–––
–––
Ω
I D = -7.8A
V DD = -15V, V GS = -4.5V
t r
t d(off)
t f
C iss
C oss
C rss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
80
13
25
580
125
79
–––
–––
–––
–––
–––
–––
ns
pF
I D = -7.8A
R G = 2.0 Ω
See Figs. 19a & 19b
V GS = 0V
V DS = -25V
? = 1.0KHz
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
–––
–––
-8.5
-52
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
30
110
-1.2
45
170
V
ns
nC
T J = 25°C, I S = -7.8A, V GS = 0V
T J = 25°C, I F = -7.8A, V DD = -15V
di/dt = 280/ μ s
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC (Bottom)
Junction-to-Case
–––
13
R θ JC (Top)
R θ JA
R θ JA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (t<10s)
–––
–––
90
60
42
°C/W
Notes:
? Repetitive rating; pulse width limited by max. junction temperature.
? Current limited by package.
? Pulse width ≤ 400 μ s; duty cycle ≤ 2%.
? When mounted on 1 inch square copper board.
? R θ is measured at T J of approximately 90°C.
.
2
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